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 MJL4281A (NPN) MJL4302A (PNP)
Preferred Device
Complementary NPN-PNP Silicon Power Bipolar Transistors
The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio.
Features http://onsemi.com
* 350 V Collector-Emitter Sustaining Voltage * Gain Complementary:
Gain Linearity from 100 mA to 5 A High Gain - 80 to 240 hFE = 50 (min) @ IC = 8 A Low Harmonic Distortion High Safe Operation Area - 1.0 A/100 V @ 1 Second High fT Pb-Free Packages are Available*
15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS
* * * *
1 2 3 TO-264 CASE 340G STYLE 2 Unit Vdc Vdc Vdc Vdc Adc Adc W C/W C xxx A YY WW G = 281 or 302 = Assembly Location = Year = Work Week = Pb-Free Package 1 BASE 3 EMITTER 2 COLLECTOR MJL4xxxA AYYWWG
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage - 1.5 V Collector Current - Continuous Collector Current - Peak (Note 1) Base Current - Continuous Total Power Dissipation @ TC = 25C Derate Above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 350 350 5.0 350 15 30 1.5 230 1.84 - 65 to +150
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Case Symbol RqJC Max 0.54 Unit C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
ORDERING INFORMATION
Device MJL4281A MJL4281AG MJL4302A MJL4302AG Package TO-264 TO-264 (Pb-Free) TO-264 TO-264 (Pb-Free) Shipping 25 Units/Rail 25 Units/Rail 25 Units/Rail 25 Units/Rail
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
Preferred devices are recommended choices for future use and best overall value.
1
January, 2006 - Rev. 2
Publication Order Number: MJL4281A/D
MJL4281A (NPN) MJL4302A (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (IC = 50 mA, IB = 0) Collector Cut-off Current (VCE = 200 V, IB = 0) Collector Cutoff Current (VCB = 350 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1.0 s (non-repetitive) (VCE = 100 Vdc, t = 1.0 s (non-repetitive) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) (IC = 3.0 Adc, VCE = 5.0 Vdc) (IC = 5.0 Adc, VCE = 5.0 Vdc) (IC = 8.0 Adc, VCE = 5.0 Vdc) (IC = 15 Adc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.8 Adc) Emitter-Base Saturation Voltage (IC = 8.0 Adc, IB = 0.8 A) Base-Emitter ON Voltage (IC = 8.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 MHz) fT 35 Cob - 600 - pF MHz hFE 80 80 80 80 50 10 VCE(sat) - VBE(sat) - VBE(on) - 1.5 1.4 Vdc 1.0 Vdc 250 250 250 250 - - Vdc - IS/b 4.5 1.0 - - Adc VCE(sus) ICEO ICBO - IEBO - 5.0 50 mAdc 350 100 Vdc mAdc mAdc Symbol Min Max Unit
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2
MJL4281A (NPN) MJL4302A (PNP)
TYPICAL CHARACTERISTICS
1000 1000
hFE, DC CURRENT GAIN
TJ = 100C TJ = 25C
hFE, DC CURRENT GAIN
TJ = 100C 100 TJ = 25C
100
10 0.01 0.1 1 10 100
10 0.01 0.1 1 10 100
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain, VCE = 5 V, NPN MJL4281A
1000 hFE, DC CURRENT GAIN 1000
Figure 2. DC Current Gain, VCE = 5 V, PNP MJL4302A
TJ = 100C TJ = 25C
hFE, DC CURRENT GAIN
TJ = 100C 100 TJ = 25C
100
10 0.01
0.1
1
10
100
10 0.01
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain, VCE = 20 V, NPN MJL4281A
1.4 SATURATION VOLTAGE (V) SATURATION VOLTAGE (V) 1.2 1 0.8 0.6 0.4 0.2 0 0.01 Vce(sat) TJ = 25C Ic/Ib = 10 10 100 Vbe(sat) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.01
Figure 4. DC Current Gain, VCE = 20 V, PNP MJL4302A
Vbe(sat)
Vce(sat)
TJ = 25C Ic/Ib = 10 10 100
0.1
1
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. Typical Saturation Voltage, NPN MJL4281A
Figure 6. Typical Saturation Voltage, PNP MJL4302A
http://onsemi.com
3
MJL4281A (NPN) MJL4302A (PNP)
TYPICAL CHARACTERISTICS
1.4 VBE(on), BASE-EMITTER VOLTAGE (V) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.01 VBE(on), BASE-EMITTER VOLTAGE (V) 2.5
2.0
1.5
1.0
0.5
0.1
1
10
100
0.0 0.01
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 7. Typical Base-Emitter Voltages, NPN MJL4281A
Figure 8. Typical Base-Emitter Voltages, PNP MJL4302A
fT, CURRENT BANDWIDTH PRODUCT (MHz)
70 60 50 40 VCE = 10 V 30 20 10 0 TJ = 25C ftest = 1 MHz 0.1 1 IC, COLLECTOR CURRENT (A) 10 VCE = 5 V
fT, CURRENT BANDWIDTH PRODUCT (MHz)
70 60 VCE = 5 V 50 40 30 20 10 0 0.1 TJ = 25C ftest = 1 MHz 1 10 VCE = 10 V
Figure 9. Typical Current Gain Bandwidth Product, NPN MJL4281A
100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 10 mS 10 1 Sec 1
Figure 10. Typical Current Gain Bandwidth Product, PNP MJL4302A
100 10 mS 10 1 Sec 1
100 mS
100 mS
0.1
0.1
0.01 1
TJ = 25C 10 100 1000
0.01 1
TJ = 25C 10 100 1000
Vce, COLLECTOR-EMITTER VOLTAGE (V)
Vce, COLLECTOR-EMITTER VOLTAGE (V)
Figure 11. Active Region Safe Operating Area, NPN MJL4281A
Figure 12. Active Region Safe Operating Area, PNP MJL4302A
http://onsemi.com
4
MJL4281A (NPN) MJL4302A (PNP)
PACKAGE DIMENSIONS
TO-3BPL (TO-264) CASE 340G-02 ISSUE J
Q -B- 0.25 (0.010)
M
TB
M
-T- C
U N A R
1 2 3
E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 28.0 29.0 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.2 REF 4.35 REF 2.2 2.6 3.1 3.5 2.25 REF 6.3 REF 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.411 REF 0.172 REF 0.087 0.102 0.122 0.137 0.089 REF 0.248 REF 0.110 0.125
L
P K
F 2 PL G
W D 3 PL 0.25 (0.010)
M
J H TB
S
DIM A B C D E F G H J K L N P Q R U W
STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER
PowerBase is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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5
MJL4281A/D


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